PBSS4160DSZ

$0.09

Description：TRANS 2NPN DUAL 60V 1A 6-TSOP
Series：-

SKU:63555c90c9bf Category: Bipolar Transistor Arrays Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：TRANS 2NPN DUAL 60V 1A 6-TSOP
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR)
Transistor Type：2 NPN (Dual)
Current - Collector (Ic) (Max)：1A
Voltage - Collector Emitter Breakdown (Max)：60V
Vce Saturation (Max) @ Ib, Ic：250mV @ 100mA, 1A
Current - Collector Cutoff (Max)：100nA
DC Current Gain (hFE) (Min) @ Ic, Vce：250 @ 1mA, 5V
Power - Max：700mW
Frequency - Transition：150MHz
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SC-74, SOT-457
Supplier Device Package：6-TSOP
Grade：Automotive
Qualification：AEC-Q100

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PBSS4160DSZ

Overview

The PBSS4160DS is a dual NPN low VCEsat transistor pair housed in a SOT457 (SC-74) TSOP6 surface-mounted package. It provides a collector-emitter voltage (VCEO) of 60 V and a continuous collector current (IC) of 1 A per transistor, with a peak pulse current (ICM) of 2 A. The device features a typical collector-emitter saturation resistance (RCEsat) of 200 mΩ at IC = 1 A and IB = 100 mA. DC current gain (hFE) ranges from 100 to 420 depending on operating conditions. Total power dissipation reaches 420 mW on standard FR4 PCBs, with a junction temperature limit of 150 °C.

Feature Summary

Dual NPN configuration in a compact SMD plastic package
Low collector-emitter saturation voltage for high efficiency
High collector current capability with minimal heat generation

Applications

Dual low power switches for motors and fans
Automotive applications

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging type and reel specifications. Confirm that the non-automotive qualification status aligns with your design requirements, as automotive-grade alternatives are available separately. Ensure compatibility with standard reflow or wave soldering footprints defined in the datasheet.

Selection Notes

Select this component when a dual NPN configuration is required within a limited board area. Evaluate thermal performance based on the specific PCB copper area and mounting pad size, as power dissipation varies significantly between standard FR4 and ceramic substrates. Ensure base drive currents meet the minimum requirements for the desired saturation resistance.

Part Context

This part belongs to the PBSS4160 series of low VCEsat transistors manufactured by Nexperia. It serves as the NPN/NPN variant, while the PNP/PNP complement is designated as PBSS5160DS. The device utilizes silicon technology and is designed for surface mount assembly in consumer and industrial electronics.