SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The PBSS4160PAN-QX is a dual NPN low VCEsat transistor housed in a DFN2020-6 (SOT1118) leadless package. It supports a maximum collector current of 1 A and a peak current of 1.5 A, with a collector-emitter voltage rating of 60 V. The device features a typical DC current gain (hFE) ranging from 70 to 430 depending on the operating current. Thermal resistance from junction to ambient is typically 86 K/W in free air. The component operates within an ambient temperature range of -55 °C to +150 °C.
Verify that the specific ordering suffix matches the required automotive or non-automotive qualification status. Confirm the package version corresponds to SOT1118. Ensure the revision history aligns with the latest product data sheet issued by Nexperia before finalizing procurement specifications.
Select this component when a dual NPN configuration with high current handling is required in a compact footprint. Evaluate the thermal resistance values against the specific PCB copper area and layer count used in the design. Consider the transition frequency and saturation voltage characteristics for efficiency requirements in switching applications.
This part belongs to the PBSS4160 series of low VCEsat transistors manufactured by Nexperia. It serves as the NPN/NPN variant within this family. The standard PBSS4160PAN is documented as non-automotive qualified; verify if the '-Q' suffix indicates specific automotive compliance or alternative packaging not detailed in the provided general datasheet.
The PBSS4160PANP is the NPN/PNP complement within the same series. For PNP/PNP configurations, the PBSS5160PAP is available. Verify pin compatibility and electrical parameters when substituting with other dual transistor packages.