PBSS4160PANP,115

PBSS4160PANP,115

$0.66
  • Description:TRANS NPN/PNP 60V 1A 6HUSON
  • Series:-

SKU:ffd00883625c Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN/PNP 60V 1A 6HUSON
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:1 NPN, 1 PNP
  • Current - Collector (Ic) (Max):1A
  • Voltage - Collector Emitter Breakdown (Max):60V
  • Vce Saturation (Max) @ Ib, Ic:120mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:150 @ 500mA, 2V
  • Power - Max:510mW
  • Frequency - Transition:175MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-UFDFN Exposed Pad
  • Supplier Device Package:6-HUSON (2x2)
  • Grade:Automotive
  • Qualification:AEC-Q100

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PBSS4160PANP,115

Overview

The PBSS4160PANP,115 is a dual NPN/PNP low VCEsat transistor manufactured by Nexperia USA Inc. It is housed in a leadless DFN2020-6 (SOT1118) surface-mounted package with dimensions of 2 mm x 2 mm x 0.65 mm. The device supports a maximum collector-emitter voltage (VCEO) of 60 V and a continuous collector current (IC) of 1 A per transistor. Peak collector current reaches 1.5 A for single pulses up to 1 ms. The NPN transistor exhibits a typical saturation resistance of 240 mΩ at 0.5 A, while the PNP transistor shows 360 mΩ under identical conditions. Total power dissipation is rated at 2 W at 25 °C ambient temperature, with an operating junction temperature range from -55 °C to +150 °C.

Feature Summary

  • Very low collector-emitter saturation voltage for high efficiency
  • High collector current capability with peak ratings exceeding continuous limits
  • High DC current gain maintained at elevated collector currents
  • Reduced printed-circuit board requirements due to thermal design

Applications

  • Load switch circuits
  • Battery-driven devices
  • Power management systems
  • Charging circuits
  • Power switches for motors and fans

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current catalog to confirm packaging details and revision status. Confirm that the non-automotive qualification aligns with target application requirements, as automotive versions require distinct part numbers. Validate component authenticity through authorized distribution channels before integration into production designs.

Selection Notes

Select this component when low saturation voltage and high current density are required in a compact footprint. Compare the NPN and PNP saturation resistances if asymmetric drive characteristics impact circuit performance. Ensure adequate PCB copper area for heat dissipation to maintain power ratings within specified thermal limits during operation.

Part Context

This device belongs to the PBSS4160 series of low VCEsat transistors. It serves as the NPN/PNP complement to the PBSS4160PAN (NPN/NPN) and pairs with the PBSS5160PAP (PNP/PNP). The DFN2020-6 package provides enhanced thermal conductivity compared to standard plastic packages, supporting higher power dissipation in space-constrained applications.

Replacement Considerations

Direct functional substitutes include the PBSS4160PAN for NPN/NPN configurations or the PBSS5160PAP for PNP/PNP setups. Verify pinout compatibility and thermal resistance values when replacing components on existing PCB layouts to ensure proper heat sinking.

PBSS4160PANP,115PBSS4160PANP,115
$0.66
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