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The PBSS4220PANSX is a dual NPN Breakthrough In Small Signal (BISS) transistor manufactured by Nexperia. It features a leadless DFN2020D-6 (SOT1118D) package with solderable side pads. Key electrical parameters include a collector-emitter voltage (VCEO) of 20 V, a continuous collector current (IC) of 2 A, and a peak collector current (ICM) of 3 A. The device exhibits a maximum collector-emitter saturation resistance (RCEsat) of 170 mΩ at IC = 1 A and IB = 50 mA. It operates within an ambient temperature range of -55 °C to +150 °C and supports a junction temperature up to 150 °C.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details such as reel or cut tape specifications. Confirm RoHS compliance status through the latest product data sheet before finalizing procurement orders.
Select this component for applications requiring compact dual NPN switching with low saturation voltage. Ensure the PCB footprint matches the DFN2020D-6 outline and consider thermal dissipation requirements based on the exposed pad design and ambient operating conditions.
This part belongs to the BISS double transistor family designed for small signal applications. It serves as the NPN/NPN complement to the PNP/PNP PBSS5220PAPS variant. Both share similar package dimensions and thermal characteristics within the medium power DFN category.
The PBSS4160PANSX is a verified alternative offering similar functionality with a higher voltage rating of 60 V. Verify pin compatibility and saturation voltage specifications when substituting.