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The PBSS4260PAN-QX is a dual NPN Breakthrough In Small Signal (BISS) transistor manufactured by Nexperia USA Inc. It operates with a maximum collector-emitter voltage of 60 V and a continuous collector current of 2 A per transistor, supporting a peak pulse current of 3 A. The device features a low collector-emitter saturation resistance of 165 mΩ at 1 A and 100 mA base drive. It utilizes a DFN2020-6 (SOT1118) leadless package with dimensions of 2 x 2 x 0.65 mm. The component is qualified to AEC-Q101 standards for automotive applications and maintains a junction temperature rating up to 150 °C.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details such as reel size or tape-and-reel specifications. Confirm that the Q-suffix aligns with the required automotive qualification standards for your specific application environment before finalizing procurement orders.
Select this component when a dual NPN configuration is required in a compact surface-mount footprint. Ensure the design accommodates the thermal dissipation limits defined for the DFN2020-6 package on the intended PCB copper layout. Verify that the 60 V breakdown voltage meets the circuit's maximum operating stress conditions.
This part belongs to the PBSS4260 series of BISS transistors designed for low saturation voltage performance. The standard version is PBSS4260PAN, while the PBSS4260PANPS variant includes detailed chemical content compliance data. The Q-suffix typically denotes automotive-grade qualification within the Nexperia portfolio.
Direct functional substitutes include the PBSS4260PAN for non-automotive contexts. For complementary polarity needs, consider the PBSS4260PANP (NPN/PNP) or PBSS5260PAP (PNP/PNP). Verify pinout compatibility and thermal characteristics when substituting.