PBSS4260PANP,115

PBSS4260PANP,115

$0.73
  • Description:TRANS NPN/PNP 60V 2A 6HUSON
  • Series:-

SKU:3f3b69b51f10 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN/PNP 60V 2A 6HUSON
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:1 NPN, 1 PNP
  • Current - Collector (Ic) (Max):2A
  • Voltage - Collector Emitter Breakdown (Max):60V
  • Vce Saturation (Max) @ Ib, Ic:90mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1A, 2V
  • Power - Max:510mW
  • Frequency - Transition:140MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-UFDFN Exposed Pad
  • Supplier Device Package:6-HUSON (2x2)
  • Grade:Automotive
  • Qualification:AEC-Q100

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PBSS4260PANP,115

Overview

The PBSS4260PANP,115 is a dual NPN/PNP Breakthrough In Small Signal (BISS) transistor in a DFN2020-6 (SOT1118) package. It features a collector-emitter voltage of 60 V and continuous collector current of 2 A per transistor. Peak collector current reaches 3 A for pulses up to 1 ms. The NPN transistor exhibits a typical saturation resistance of 165 mΩ at 1 A, while the PNP type shows 250 mΩ under similar conditions. Transition frequencies are 140 MHz for NPN and 100 MHz for PNP. Total power dissipation varies from 510 mW to 2 W depending on PCB copper thickness and layer count.

Feature Summary

  • Very low collector-emitter saturation voltage for high efficiency
  • High collector current capability with elevated DC current gain
  • Reduced printed-circuit board requirements due to compact leadless package
  • Qualified for automotive applications according to AEC-Q101 standards

Applications

  • Load switch circuits
  • Battery-driven devices
  • Power management systems
  • Charging circuits
  • Power switches for motors and fans

Procurement Notes

Verify the specific ordering suffix against the manufacturer's latest documentation to ensure correct packaging configuration. Confirm that the component meets the required automotive qualification standards if deployed in vehicle electronics. Cross-reference the marking code '2Q' with the official datasheet to validate authenticity during incoming inspection procedures.

Selection Notes

Select this component when low saturation voltage is critical for minimizing conduction losses in high-current switching applications. The DFN2020-6 package offers a thermal solution suitable for medium power dissipation without requiring extensive heatsinking. Ensure the design accommodates the specified peak current limits for transient loads exceeding the continuous rating.

Part Context

This device belongs to Nexperia's BISS transistor family, designed to replace standard small-signal transistors in power switching roles. It serves as an alternative to discrete MOSFETs where lower gate drive complexity is preferred. The complementary NPN/PNP configuration allows for push-pull or half-bridge driver topologies within a single compact footprint.

Replacement Considerations

The PBSS4260PAN is the NPN/NPN complement, and the PBSS5260PAP is the PNP/PNP complement. Designers should verify pin compatibility and electrical symmetry when substituting these variants in existing circuit layouts.

PBSS4260PANP,115PBSS4260PANP,115
$0.73
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