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The PBSS4260PANP,115 is a dual NPN/PNP Breakthrough In Small Signal (BISS) transistor in a DFN2020-6 (SOT1118) package. It features a collector-emitter voltage of 60 V and continuous collector current of 2 A per transistor. Peak collector current reaches 3 A for pulses up to 1 ms. The NPN transistor exhibits a typical saturation resistance of 165 mΩ at 1 A, while the PNP type shows 250 mΩ under similar conditions. Transition frequencies are 140 MHz for NPN and 100 MHz for PNP. Total power dissipation varies from 510 mW to 2 W depending on PCB copper thickness and layer count.
Verify the specific ordering suffix against the manufacturer's latest documentation to ensure correct packaging configuration. Confirm that the component meets the required automotive qualification standards if deployed in vehicle electronics. Cross-reference the marking code '2Q' with the official datasheet to validate authenticity during incoming inspection procedures.
Select this component when low saturation voltage is critical for minimizing conduction losses in high-current switching applications. The DFN2020-6 package offers a thermal solution suitable for medium power dissipation without requiring extensive heatsinking. Ensure the design accommodates the specified peak current limits for transient loads exceeding the continuous rating.
This device belongs to Nexperia's BISS transistor family, designed to replace standard small-signal transistors in power switching roles. It serves as an alternative to discrete MOSFETs where lower gate drive complexity is preferred. The complementary NPN/PNP configuration allows for push-pull or half-bridge driver topologies within a single compact footprint.
The PBSS4260PAN is the NPN/NPN complement, and the PBSS5260PAP is the PNP/PNP complement. Designers should verify pin compatibility and electrical symmetry when substituting these variants in existing circuit layouts.