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Product Detailed Parameters
- Description：PBSS4260PANPS-Q/SOT1118/HUSON6
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR)
- Transistor Type：-
- Current - Collector (Ic) (Max)：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Power - Max：-
- Frequency - Transition：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The PBSS4260PANPS-QX is a dual transistor array featuring one NPN and one PNP low VCEsat Breakthrough In Small Signal (BISS) device. It operates with a collector-emitter voltage of 60V and a continuous collector current of 2A per transistor, supporting peak currents up to 3A. The component utilizes a DFN2020D-6 (SOT1118D) leadless package with visible side pads for thermal enhancement and Automatic Optical Inspection compatibility. Qualified under AEC-Q101 standards, it offers high DC current gain and reduced saturation resistance, with total power dissipation reaching 960mW on specific PCB configurations.
Feature Summary
- Very low collector-emitter saturation voltage for improved energy efficiency
- High collector current capability with elevated DC current gain at high currents
- Exposed heat sink providing excellent thermal and electrical conductivity
- Suitable for Automatic Optical Inspection due to visible solderable side pads
Applications
- Load switch circuits
- Battery-driven devices
- Power management systems
- Charging circuits
- LED lighting applications
Procurement Notes
Verify the specific suffix 'QX' against official Nexperia documentation to confirm reel packaging details and automotive qualification status. Ensure the ordering part number matches the required tape-and-reel specifications for automated assembly processes. Cross-reference the latest datasheet revision to confirm compliance with current RoHS and REACH regulations before finalizing procurement orders.
Selection Notes
Select this component when a mixed NPN/PNP configuration is required in a compact footprint. The BISS technology ensures minimal voltage drop during conduction, making it suitable for low-voltage battery applications. Verify that the thermal requirements of the target application align with the junction-to-ambient thermal resistance values provided for the specific PCB copper layout.
Part Context
This device belongs to the PBSS4260 series of low VCEsat double transistors. The standard PBSS4260PANS variant provides an NPN/NPN complement, while the PBSS5260PAPS offers a PNP/PNP option. All variants share similar electrical characteristics and package dimensions, allowing for flexible design choices based on circuit polarity requirements within the same physical space.
Replacement Considerations
Direct functional substitutes include the PBSS4260PANS for NPN/NPN configurations or the PBSS5260PAPS for PNP/PNP setups. Verify pinout compatibility and thermal performance metrics when replacing components to ensure the new part meets the original design's power dissipation and switching speed requirements.
