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The PBSS4260PANSX is a dual NPN transistor array manufactured by Nexperia USA Inc. in a DFN2020D-6 (SOT1118D) surface-mount package. It features a collector-emitter voltage of 60 V and a continuous collector current of 2 A per transistor, with a peak pulse current capability of 3 A. The device utilizes BISS technology to achieve low saturation voltage, specified as a maximum of 350 mV at 2 A collector current. Key electrical parameters include a transition frequency of 140 MHz and a DC current gain minimum of 120 at 1 A. Total power dissipation reaches 960 mW on a standard FR4 PCB, with a junction temperature limit of 150 °C.
Verify the specific ordering suffix against the manufacturer's latest documentation before procurement. The 'X' suffix indicates tape and reel packaging. Confirm that the non-automotive qualified status aligns with the target application requirements, as automotive versions require distinct part numbers. Ensure component authenticity through authorized distribution channels.
Select this component for applications requiring compact dual NPN switching with minimal conduction loss. Evaluate thermal resistance values based on the specific PCB copper layer count and footprint size. Ensure base drive currents are sufficient to maintain the transistor within the low saturation region during operation.
This component belongs to the PBSS4260 series of low VCEsat double transistors. The PANS variant specifically denotes the DFN2020D-6 leadless package. The PNP/PNP complement for this series is the PBSS5260PAPS. The marking code for identification is 3L.
Direct functional substitutes within the same package and specification range should be verified via official cross-reference lists. No specific replacement part numbers are confirmed in the provided documentation.