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Product Detailed Parameters
- Description：TRANS NPN/PNP 50V 2.7A 8-SO
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：1 NPN, 1 PNP
- Current - Collector (Ic) (Max)：2.7A
- Voltage - Collector Emitter Breakdown (Max)：50V
- Vce Saturation (Max) @ Ib, Ic：340mV @ 270mA, 2.7A / 370mV @ 270mA, 2.7A
- Current - Collector Cutoff (Max)：100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce：300 @ 1A, 2V / 180 @ 1A, 2V
- Power - Max：750mW
- Frequency - Transition：-
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
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Overview
The PBSS4350SPN,115 is a Breakthrough In Small Signal (BISS) transistor containing complementary NPN and PNP units in an SO8 plastic small outline package (SOT96-1). It features low collector-emitter saturation voltage and high collector current capability. The NPN unit supports a collector-emitter voltage of 50 V and continuous collector current of 2.7 A, with a peak current of 5 A. The PNP unit mirrors these ratings at -50 V and -2.7 A. Collector-emitter saturation resistance is typically 90 mΩ for the NPN and 95 mΩ for the PNP at 2 A. Total power dissipation reaches 0.75 W on FR4 standard footprint and 2 W on ceramic PCB.
Feature Summary
- Low collector-emitter saturation voltage for improved efficiency
- High collector current capability at elevated temperatures
- High DC current gain maintained at high collector currents
- Reduced printed-circuit board area requirements compared to conventional transistors
Applications
- Complementary MOSFET driver circuits
- Half and full bridge motor drivers
- Dual low power switches such as motors and fans
- Automotive electronic systems
Procurement Notes
Verify the specific ordering suffix against the manufacturer's latest documentation to confirm packing quantity and reel specifications. Confirm RoHS compliance status and lead times directly with authorized distributors or Nexperia sales offices prior to finalizing procurement plans.
Selection Notes
Select this component when space-constrained designs require complementary switching pairs with minimal saturation losses. Ensure thermal management aligns with the specified junction-to-ambient resistance values for the target PCB material. Verify that drive currents meet the minimum base current requirements for the desired collector current levels.
Part Context
This device belongs to the Nexperia BISS family, designed to replace discrete transistor pairs in compact surface-mount applications. It integrates matched NPN and PNP structures within a single SO8 package to reduce footprint and improve switching consistency between complementary channels.
Replacement Considerations
The datasheet identifies PBSS4350SS as the NPN/NPN complement and PBSS5350SS as the PNP/PNP complement within the same package series. Verify pinout compatibility and electrical parameters before substituting with other BISS variants.
