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Product Detailed Parameters
- Description：TRANS 2PNP 120V 1A 6HUSON
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：2 PNP (Dual)
- Current - Collector (Ic) (Max)：1A
- Voltage - Collector Emitter Breakdown (Max)：120V
- Vce Saturation (Max) @ Ib, Ic：480mV @ 100mA, 1A
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：50 @ 500mA, 2V
- Power - Max：510mW
- Frequency - Transition：100MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-UFDFN Exposed Pad
- Supplier Device Package：6-HUSON (2x2)
- Grade：Automotive
- Qualification：AEC-Q100
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Overview
The PBSS5112PAP,115 is a PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor manufactured by Nexperia. It is housed in a leadless DFN2020-6 (SOT1118) plastic package with dimensions of 2 x 2 x 0.65 mm. The device features a collector-emitter voltage (VCEO) of -120 V and a continuous collector current (IC) of -1 A, with a peak pulse current (ICM) of -1.5 A. The emitter-base voltage (VEBO) is rated at -7 V. Key electrical characteristics include a maximum collector-emitter saturation resistance (RCEsat) of 440 mΩ at IC = -500 mA and IB = -50 mA. The DC current gain (hFE) ranges from 15 to 305 depending on the collector current. The transition frequency (fT) is typically 100 MHz. The component is qualified under AEC-Q101 standards for automotive applications.
Feature Summary
- Very low collector-emitter saturation voltage for high energy efficiency
- High collector current capability with improved thermal performance
- AEC-Q101 qualified for automotive reliability requirements
Applications
- Load switch circuits
- Battery-driven devices
- Power management systems
- Charging circuits
- Power switches for motors and fans
Procurement Notes
Verify the specific ordering suffix and marking code against the official datasheet before procurement. Confirm that the DFN2020-6 package variant matches the required footprint for the target PCB design. Ensure compliance with RoHS directives and check for any recent product change notices or longevity program updates from Nexperia to guarantee supply continuity.
Selection Notes
Select this component when high voltage handling up to 120 V is required alongside low saturation voltage characteristics. The dual PNP configuration allows for complementary switching or bridge applications within a compact surface-mount footprint. Consider the thermal resistance values provided for different PCB copper weights and layer counts to ensure adequate heat dissipation under maximum load conditions.
Part Context
This part belongs to Nexperia's BISS transistor family, designed for small signal applications requiring high breakdown voltages. It serves as the PNP/PNP complement to the PBSS4112PAN (NPN/NPN) and PBSS4112PANP (NPN/PNP) variants. The DFN2020-6 package provides a balance between power handling capacity and board space efficiency compared to larger packages.
Replacement Considerations
Direct functional equivalents include the PBSS4112PAN for NPN/NPN configurations or other Nexperia BISS series transistors with matching voltage and current ratings. Verify pinout compatibility and thermal characteristics when substituting with components from other manufacturers.
