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The PBSS5160PAP-QX is a dual PNP Breakthrough In Small Signal (BISS) transistor manufactured by Nexperia. It operates with a collector-emitter voltage of -60 V and a continuous collector current of -1 A, supporting peak currents up to -1.5 A. The device features a very low collector-emitter saturation resistance of 360 mΩ at -0.5 A. Packaged in a leadless DFN2020-6 (SOT1118) plastic surface-mount format, it offers high energy efficiency and reduced PCB requirements. The component is qualified under the AEC-Q101 standard for automotive applications.
Verify the specific ordering suffix against official Nexperia documentation to confirm packaging details such as reel or cut tape configuration. Ensure the procurement channel sources directly from authorized distributors to guarantee authenticity and traceability of the AEC-Q101 qualified components.
Select this component for designs requiring dual PNP switching in a compact footprint. The DFN2020-6 package provides enhanced thermal performance compared to smaller SMD options. Consider the -60 V rating and -1 A current limit when designing load paths. Verify that the required saturation voltage meets the efficiency targets of the target application.
This part belongs to the PBSS5160 series of low VCEsat BISS transistors. It serves as the PNP/PNP variant within the family, complementing the NPN/NPN PBSS4160PAN and NPN/PNP PBSS4160PANP models. The series is designed to replace traditional small-signal transistors where higher current handling and lower power loss are critical.
Direct pin-compatible replacements include other Nexperia PBSS5160 variants with different packaging suffixes. Cross-brand substitutions require careful verification of saturation voltage, current gain, and thermal resistance parameters to ensure circuit stability.