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Product Detailed Parameters
- Description：TRANS 2PNP 60V 1A 6HUSON
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：2 PNP (Dual)
- Current - Collector (Ic) (Max)：1A
- Voltage - Collector Emitter Breakdown (Max)：60V
- Vce Saturation (Max) @ Ib, Ic：340mV @ 100mA, 1A
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：120 @ 500mA, 2V
- Power - Max：510mW
- Frequency - Transition：125MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-UFDFN Exposed Pad
- Supplier Device Package：6-HUSON (2x2)
- Grade：Automotive
- Qualification：AEC-Q100
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Overview
The PBSS5160PAP,115 is a PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor manufactured by Nexperia. It is housed in a leadless DFN2020-6 (SOT1118) surface-mounted device plastic package with dimensions of 2 x 2 x 0.65 mm. The component features a collector-emitter voltage (VCEO) of -60 V and a continuous collector current (IC) of -1 A, with a peak collector current (ICM) of -1.5 A for single pulses up to 1 ms. Key electrical characteristics include a typical DC current gain (hFE) ranging from 70 to 245 and a transition frequency (fT) of 125 MHz. The device operates within an ambient temperature range of -55 °C to +150 °C and is qualified under the AEC-Q101 standard.
Feature Summary
- Very low collector-emitter saturation voltage (VCEsat) for high energy efficiency
- High collector current capability and high DC current gain at elevated currents
- Reduced printed-circuit board (PCB) requirements due to compact packaging
- Qualified for automotive applications according to AEC-Q101 standards
Applications
- Load switch circuits
- Battery-driven devices
- Power management systems
- Charging circuits
- Power switches for motors and fans
Procurement Notes
Verify the specific ordering suffix
Selection Notes
Select this component when a dual PNP configuration is required in a minimal footprint. The BISS technology ensures low saturation voltage, which minimizes power loss and heat generation compared to standard small-signal transistors. Ensure the PCB layout accommodates the DFN2020-6 thermal pad for optimal heat dissipation, as power derating curves vary significantly based on copper area and layer count.
Part Context
This part belongs to Nexperia's BISS transistor family, designed for low-voltage, high-efficiency switching. It serves as the PNP/PNP complement to the NPN/NPN PBSS4160PAN and the NPN/PNP PBSS4160PA. The marking code for this device is '2L'.
Replacement Considerations
Direct pin-compatible replacements within the same package are not explicitly listed in the provided documentation. Designers should evaluate the PBSS5160T-QR for single-transistor applications or other BISS series parts if dual configurations are needed, verifying electrical parameters against the original design requirements.
