PBSS5260PAPSX

PBSS5260PAPSX

$0.74
  • Description:TRANS 2PNP 60V 2A DFN2020D-6
  • Series:-

SKU:2bbf1d97eee7 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2PNP 60V 2A DFN2020D-6
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT),Bulk
  • Transistor Type:2 PNP (Dual)
  • Current - Collector (Ic) (Max):2A
  • Voltage - Collector Emitter Breakdown (Max):60V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 200mA, 2A
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:110 @ 1A, 2V
  • Power - Max:370mW
  • Frequency - Transition:100MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-UDFN Exposed Pad
  • Supplier Device Package:DFN2020D-6
  • Grade:Automotive
  • Qualification:AEC-Q101

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PBSS5260PAPSX

Overview

The PBSS5260PAPSX is a PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) double transistor manufactured by Nexperia. It is housed in a leadless DFN2020D-6 (SOT1118D) surface-mounted package with visible and solderable side pads. The device features a collector-emitter voltage of -60 V, a continuous collector current of -2 A per transistor, and a peak collector current of -3 A. Key electrical characteristics include a maximum collector-emitter saturation resistance of 310 mΩ at IC = -1 A and IB = -50 mA. Total power dissipation reaches 960 mW when mounted on an FR4 PCB with a 1 cm² collector pad. The component is qualified to the AEC-Q101 standard for automotive applications.

Feature Summary

  • Very low collector-emitter saturation voltage for high energy efficiency
  • Exposed heat sink for excellent thermal and electrical conductivity
  • High collector current gain at high currents
  • Suitable for Automatic Optical Inspection of solder joints

Applications

  • Load switch
  • Battery-driven devices
  • Power management
  • Charging circuits
  • LED lighting

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging configuration. Confirm that the delivered components match the required AEC-Q101 qualification status if intended for automotive use. Cross-reference the marking code '3H' with the datasheet to validate authenticity upon receipt.

Selection Notes

Select this component for designs requiring dual PNP transistors with low saturation voltage in a compact footprint. Ensure the application operates within the specified junction temperature range of -55 °C to 150 °C. Verify that the PCB layout supports the exposed pad thermal requirements to achieve the rated power dissipation capabilities.

Part Context

This part belongs to the BISS family of double transistors designed for small signal applications. It serves as the PNP complement to the NPN/NPN PBSS4260PANS. The technology utilizes silicon to provide high current capability while maintaining a reduced printed-circuit board area requirement compared to traditional packages.

Replacement Considerations

The documented NPN/NPN complement is the PBSS4260PANS. No other direct substitute part numbers are confirmed in the provided source material.

PBSS5260PAPSXPBSS5260PAPSX
$0.74
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