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The PBSS5260PAPSX is a PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) double transistor manufactured by Nexperia. It is housed in a leadless DFN2020D-6 (SOT1118D) surface-mounted package with visible and solderable side pads. The device features a collector-emitter voltage of -60 V, a continuous collector current of -2 A per transistor, and a peak collector current of -3 A. Key electrical characteristics include a maximum collector-emitter saturation resistance of 310 mΩ at IC = -1 A and IB = -50 mA. Total power dissipation reaches 960 mW when mounted on an FR4 PCB with a 1 cm² collector pad. The component is qualified to the AEC-Q101 standard for automotive applications.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging configuration. Confirm that the delivered components match the required AEC-Q101 qualification status if intended for automotive use. Cross-reference the marking code '3H' with the datasheet to validate authenticity upon receipt.
Select this component for designs requiring dual PNP transistors with low saturation voltage in a compact footprint. Ensure the application operates within the specified junction temperature range of -55 °C to 150 °C. Verify that the PCB layout supports the exposed pad thermal requirements to achieve the rated power dissipation capabilities.
This part belongs to the BISS family of double transistors designed for small signal applications. It serves as the PNP complement to the NPN/NPN PBSS4260PANS. The technology utilizes silicon to provide high current capability while maintaining a reduced printed-circuit board area requirement compared to traditional packages.
The documented NPN/NPN complement is the PBSS4260PANS. No other direct substitute part numbers are confirmed in the provided source material.