PBSS5350SS,115

Overview

The Nexperia PBSS5350SS,115 is a PNP/PNP double low VCEsat Breakthrough In Small Signal (BISS) transistor housed in an SOT96-1 (SO8) plastic package. It features a collector-emitter voltage of -50 V and a continuous collector current of -2.7 A per transistor. The peak collector current reaches -5 A for single pulses up to 1 ms. Key electrical parameters include a typical collector-emitter saturation resistance of 95 mΩ at IC = -2 A and IB = -200 mA. The device offers high DC current gain, with a minimum of 95 at full load (-2.7 A). Total power dissipation varies from 0.55 W to 1.43 W depending on the PCB mounting conditions.

Feature Summary

• Low collector-emitter saturation voltage for improved efficiency
• High collector current capability with minimal heat generation
• High DC current gain maintained at elevated collector currents
• Reduced printed-circuit board area requirements compared to conventional transistors

Applications

• Dual low power switches for motors and fans
• Automotive electronic circuits

Procurement Notes

Verify the specific ordering suffix against the manufacturer's latest documentation to ensure correct packing quantities and reel specifications. Confirm that the component matches the required SOT96-1 package dimensions and pinout configuration before integration into the design. Cross-reference the marking code '5350SS' for visual identification during assembly processes.

Selection Notes

Select this component when dual PNP switching is required in a compact surface-mount form factor. The BISS technology provides superior saturation characteristics compared to standard bipolar transistors. Ensure thermal management strategies account for the specified power dissipation limits under the intended PCB copper layout and ambient temperature conditions.

Part Context

This device belongs to the PBSS5350 series of low VCEsat BISS transistors. It serves as the PNP/PNP variant within the family, complementing other configurations such as NPN/NPN or mixed polarity options. The series is designed to replace discrete transistor pairs, offering space savings and consistent electrical matching between the two internal devices.

Replacement Considerations

Direct functional equivalents may include the PBSS4350SS for NPN/NPN applications or other PBSS series members with compatible voltage and current ratings. Verify pin compatibility and thermal resistance values when substituting components from different manufacturers or package variants.