PCDH30120CCG1_T0_00601

$16.50

Description：DIODE ARR SIC 1200V 15A TO-247AD
Series：-

SKU:8cf12957a552 Category: Diode Arrays Brand: Panjit International Inc.

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Product introduction

Product Detailed Parameters

Description：DIODE ARR SIC 1200V 15A TO-247AD
Series：-
Mfr：Panjit International Inc.
Package：Tube
Diode Configuration：1 Pair Common Cathode
Technology：SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)：1200 V
Current - Average Rectified (Io) (per Diode)：15A (DC)
Voltage - Forward (Vf) (Max) @ If：1.7 V @ 15 A
Speed：No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)：0 ns
Current - Reverse Leakage @ Vr：140 µA @ 1200 V
Operating Temperature - Junction：-55°C ~ 175°C
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247AD
Grade：-
Qualification：-

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PCDH30120CCG1_T0_00601

Overview

The PCDH30120CCG1 is a high-voltage superjunction MOSFET manufactured by Panjit International Inc. This component features a 1200V breakdown voltage and a typical on-resistance optimized for efficient power switching. It utilizes advanced trench gate technology to achieve low gate charge and reduced switching losses. The device is designed with a robust package structure to support high thermal performance and reliable operation in demanding industrial applications.

Feature Summary

Superjunction MOSFET technology for enhanced efficiency
High voltage capability suitable for industrial power systems
Optimized gate charge characteristics for fast switching

Applications

Industrial motor drives
Uninterruptible power supplies (UPS)
High-frequency power conversion circuits

Procurement Notes

Verify the specific suffix codes against official datasheets to ensure correct pinout and thermal specifications. Confirm that the ordering information matches the exact voltage and current ratings required for your design. Always check for updated revision levels to guarantee compatibility with existing manufacturing processes.

Selection Notes

Select this component based on its high voltage rating and low on-resistance profile for high-efficiency designs. Consider the thermal resistance values when designing heat dissipation solutions. Ensure the gate drive circuitry aligns with the specified gate charge requirements to optimize switching performance.

Part Context

This part belongs to Panjit's high-voltage superjunction MOSFET lineup, targeting applications requiring high reliability and efficiency. These devices are engineered to replace traditional planar MOSFETs in high-power scenarios, offering superior performance metrics for modern power electronics systems.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

We ship via DHL, FedEx, UPS, and TNT. If you prefer a specific logistics provider, we can ship using your designated carrier.

Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.