PCFC190N65S3W

Overview

The PCFC190N65S3W is a wafer-level component from onsemi’s SuperFET III series, representing the pre-packaging stage of an N-channel enhancement-mode MOSFET. This silicon-based device utilizes charge balance technology to achieve low on-resistance and gate charge characteristics inherent to the SuperFET III architecture. Designed for high-voltage applications, it supports a drain-source voltage of 650V and features optimized body diode reverse recovery performance. The wafer format allows for integration into custom or standard surface-mount packages such as TO-263, facilitating efficient power conversion in systems requiring high reliability and compact form factors.

Feature Summary

• SuperFET III charge balance technology for enhanced efficiency
• Optimized body diode reverse recovery characteristics
• High dv/dt capability for robust switching performance
• Wafer-level format for flexible packaging integration

Applications

• Industrial motor drives
• Uninterruptible power supplies (UPS)
• High-efficiency AC/DC converters

Procurement Notes

Verify that the procurement channel explicitly handles wafer-level sales rather than finished discrete components. Confirm that the received material matches the specific SuperFET III wafer lot specifications required for your packaging process. Ensure handling procedures comply with electrostatic discharge protocols appropriate for bare silicon wafers prior to dicing and assembly.

Selection Notes

Select this part when designing systems requiring the electrical performance of the NVB190N65S3F but needing custom or alternative package configurations. It serves as the foundational silicon die for the SuperFET III family. Engineers must account for subsequent packaging steps to achieve final thermal and mechanical ratings. This option is suitable for manufacturers integrating their own assembly lines or using specialized substrate technologies.

Part Context

This component belongs to the SuperFET III family, which includes finished devices like the NVB190N65S3F (TO-263) and NTPF190N65S3HF (TO-247). Unlike these packaged counterparts, the PCFC190N65S3W is supplied as raw silicon wafers. It shares the same underlying 650V N-channel technology and 190mΩ characteristic potential, serving as the source material for various surface-mount and through-hole package variants within the same product line.

Replacement Considerations

Direct replacement requires converting the wafer into a packaged device. Equivalent finished parts include NVB190N65S3F for TO-263 SMD applications and NTPF190N65S3HF for TO-247 through-hole mounting. If packaging is not feasible, consider other SuperFET III variants with compatible voltage and current ratings.