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The PCFC76N60NW is an N-channel SupreMOS power MOSFET manufactured by onsemi, designed for high-efficiency switching applications. It features a 600 V drain-source voltage rating and supports a continuous drain current of 76 A. The device utilizes advanced superjunction technology to achieve a low on-resistance of 36 mΩ at 25°C. Packaged in a TO-247-3 through-hole format, it offers robust thermal performance with a maximum power dissipation of 543 W. The component operates within a temperature range of -55°C to +150°C junction temperature, making it suitable for demanding industrial environments.
Verify the specific suffix 'W' against official datasheets to confirm package or tape-and-reel variations. Confirm RoHS compliance status directly with the manufacturer as regulatory details may vary by production batch. Ensure that the through-hole mounting requirements align with your PCB design constraints before finalizing procurement.
Select this component when a 600V rating and 76A current capacity are required for high-power switching. The low Rds(on) makes it ideal for minimizing conduction losses in efficient power conversion topologies. Consider the TO-247 package size for adequate heat sinking solutions in space-constrained industrial designs.
This part belongs to the SupreMOS family from onsemi, representing next-generation high-voltage superjunction technology. It distinguishes itself from traditional SJ MOSFETs through specialized deep trench fill工艺, offering lower on-resistance and improved switching performance compared to legacy devices in the same voltage class.
Direct replacements include FCA76N60N and FCH76N60NF. Verify pinout compatibility and thermal resistance values when substituting. Note that while electrical ratings are similar, slight differences in gate charge or packaging may require circuit adjustments.