PE15A5112

RF Amplifiers Overview

The PE15A5112 is a high-power GaN amplifier manufactured by Pasternack, designed for operation within the 0.5 GHz to 2.7 GHz frequency range. This component delivers a gain of 44 dB and achieves a saturated output power (Psat) of 20 Watts. It utilizes Class AB amplification topology and features SMA connectors for signal interfacing. The unit is classified under RF Power Amplifiers and is intended for applications requiring significant power output across a broad microwave bandwidth.

RF Amplifiers Feature Summary

• Utilizes Gallium Nitride (GaN) technology for high-power performance
• Provides 44 dB of signal gain
• Operates with Class AB amplification topology
• Features SMA connector interfaces

RF Amplifiers Applications

• RF test and measurement instrumentation
• Microwave communication systems
• Broadband signal generation

RF Amplifiers Procurement Notes

Verify the specific datasheet version and manufacturing lot details directly with Pasternack or authorized distributors before procurement. Confirm that the SMA connector polarity and mating requirements align with existing system infrastructure. Ensure adequate thermal management solutions are integrated, as the device generates significant heat during high-power operation. Validate that the supply voltage and current specifications meet the design constraints of the target application environment.

RF Amplifiers Selection Notes

Select this model when a wide operational bandwidth from 0.5 GHz to 2.7 GHz is required alongside high saturated output power. The 44 dB gain makes it suitable for driving subsequent stages in complex RF chains. Consider the physical size and thermal dissipation capabilities of the enclosure, as the 20 Watt Psat rating necessitates robust heat sinking. Evaluate the compatibility of the SMA interface with system cabling and connector standards.

RF Amplifiers Part Context

This component belongs to Pasternack's portfolio of RF power amplifiers, specifically those leveraging GaN semiconductor technology for enhanced efficiency and power density. It serves as a discrete module solution for engineers designing systems that require reliable high-power amplification without the complexity of custom-built transistor-level designs. The product line targets professional and industrial RF applications.

RF Amplifiers Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.