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The Nexperia PEMB11,115 is a PNP/PNP Resistor-Equipped Transistor (RET) housed in an ultra-small SOT666 surface-mounted package. It integrates two PNP transistors with built-in bias resistors (R1 = 10 kΩ, R2 = 10 kΩ). Key electrical parameters include a collector-emitter voltage (VCEO) of -50 V and a continuous output current (IO) of -100 mA per transistor. The device features a transition frequency (fT) of 180 MHz at IC = -10 mA and a total power dissipation (Ptot) of 300 mW for the dual device at 25 °C ambient temperature.
Verify the specific ordering suffix matches the required packaging format before procurement. Confirm that the PEMB11 variant lacks automotive qualification compared to other RET family members. Ensure the supplier provides the official product data sheet to validate the marking code B1 and pin configuration against the SOT666 outline.
Select this component when space constraints require a compact dual PNP solution with integrated biasing. Compare the 10 kΩ resistor values against circuit requirements to ensure proper drive levels. Consider the PEMD3 NPN/PNP complement if mixed polarity logic is needed within the same package form factor.
The PEMB11 belongs to the PNP/PNP Resistor-Equipped Transistor family from Nexperia. It serves as the PNP counterpart to the PEMH11 (NPN/NPN) and complements the PEMD3 (NPN/PNP) in the same SOT666 package series. This family is designed to replace discrete transistor pairs in digital switching applications.
Direct functional substitutes within the same package include the PEMH11 for NPN/NPN configurations or the PEMD3 for NPN/PNP combinations. Verify that alternative RETs match the -50 V rating and 100 mA current capability.