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The PEMB1,115 is a dual PNP resistor-equipped transistor manufactured by Nexperia. It integrates two PNP transistors with built-in bias resistors into a single surface-mount package. The device supports a maximum collector current of 100 mA and operates with a collector-emitter voltage of 50 V. Key electrical parameters include a power dissipation of 300 mW, a DC current gain (hFE) ranging from 200 to 450, and a transition frequency (fT) of 175 MHz. The unit utilizes an SOT-363 (SC-88) package configuration.
Verify the specific suffix and ordering code against official Nexperia documentation to ensure correct packaging and variant selection. Confirm RoHS compliance status and automotive qualification requirements if applicable to the target design environment prior to procurement.
Select this component when dual PNP switching functionality with integrated base resistors is required. Ensure the 50 V collector-emitter voltage rating and 100 mA current capacity meet circuit demands. Verify that the SOT-363 footprint aligns with the PCB layout constraints.
This part belongs to the PEMB series of dual PNP resistor-equipped transistors. It serves as a compact solution for replacing multiple discrete components in digital switching applications, offering simplified circuit design and reduced board space consumption compared to individual transistor assemblies.
Publicly confirmed substitute part numbers are not available in the provided source data. Consult official Nexperia cross-reference documentation for verified alternatives.