PEMB13,115

PEMB13,115

  • Description:TRANS PREBIAS 2PNP 50V SOT666
  • Series:-

SKU:abdb0ebbce26 Category: Brand:

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Product Detailed Parameters

  • Description:TRANS PREBIAS 2PNP 50V SOT666
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR)
  • Transistor Type:2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):4.7kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):1µA
  • Frequency - Transition:-
  • Power - Max:300mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:SOT-666

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PEMB13,115

Overview

The PEMB13,115 is a PNP/PNP double Resistor-Equipped Transistor (RET) housed in a SOT666 plastic surface-mounted package. It integrates two PNP transistors with built-in bias resistors R1=4.7 kΩ and R2=47 kΩ. Key electrical parameters include a collector-emitter voltage (VCEO) of -50 V, an output current (IO) of -100 mA per transistor, and a total power dissipation (Ptot) of 300 mW for the device at 25°C ambient temperature. The DC current gain (hFE) is specified as a minimum of 100 at IC=-10 mA. The transition frequency (fT) is typically 180 MHz.

Feature Summary

  • Integrates dual PNP transistors with fixed internal bias resistors to reduce component count.
  • AEC-Q101 qualified for automotive application suitability.
  • SOT666 package design reduces pick and place costs compared to discrete equivalents.

Applications

  • Low current peripheral driver circuits
  • Control of IC inputs
  • Replacement for general-purpose transistors in digital applications

Procurement Notes

Verify the specific ordering suffix matches the required packing method, such as tape and reel configurations. Confirm the product status is active for new designs, as availability may vary by region. Ensure the supplier provides traceability documentation consistent with AEC-Q101 qualification requirements for automotive-grade components.

Selection Notes

Select this component when space constraints favor a single 6-lead package over two separate transistors. Verify that the integrated resistor values (R1=4.7 kΩ, R2=47 kΩ) align with the target circuit's base drive requirements. Consider the thermal resistance characteristics if operating near the maximum junction temperature limits.

Part Context

This part belongs to the PEMB/PUMB series of PNP/PNP resistor-equipped transistors. It serves as the SOT666 packaged variant, distinct from the PUMB13 which utilizes the smaller SOT363 package. Both share identical electrical specifications but differ in physical footprint and thermal handling capabilities due to package geometry.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided datasheet. Designers should consult official Nexperia documentation for cross-reference lists or equivalent products within the same family.

PEMB13,115PEMB13,115

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