SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The PEMB13,115 is a PNP/PNP double Resistor-Equipped Transistor (RET) housed in a SOT666 plastic surface-mounted package. It integrates two PNP transistors with built-in bias resistors R1=4.7 kΩ and R2=47 kΩ. Key electrical parameters include a collector-emitter voltage (VCEO) of -50 V, an output current (IO) of -100 mA per transistor, and a total power dissipation (Ptot) of 300 mW for the device at 25°C ambient temperature. The DC current gain (hFE) is specified as a minimum of 100 at IC=-10 mA. The transition frequency (fT) is typically 180 MHz.
Verify the specific ordering suffix matches the required packing method, such as tape and reel configurations. Confirm the product status is active for new designs, as availability may vary by region. Ensure the supplier provides traceability documentation consistent with AEC-Q101 qualification requirements for automotive-grade components.
Select this component when space constraints favor a single 6-lead package over two separate transistors. Verify that the integrated resistor values (R1=4.7 kΩ, R2=47 kΩ) align with the target circuit's base drive requirements. Consider the thermal resistance characteristics if operating near the maximum junction temperature limits.
This part belongs to the PEMB/PUMB series of PNP/PNP resistor-equipped transistors. It serves as the SOT666 packaged variant, distinct from the PUMB13 which utilizes the smaller SOT363 package. Both share identical electrical specifications but differ in physical footprint and thermal handling capabilities due to package geometry.
Publicly confirmed substitute part numbers are not available in the provided datasheet. Designers should consult official Nexperia documentation for cross-reference lists or equivalent products within the same family.