PEMB14,115

PEMB14,115

  • Description:TRANS PREBIAS 2PNP 50V SOT666
  • Series:-

SKU:c9828437ca11 Category: Brand:

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Product Detailed Parameters

  • Description:TRANS PREBIAS 2PNP 50V SOT666
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR)
  • Transistor Type:2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):47kOhms
  • Resistor - Emitter Base (R2):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 1mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):1µA
  • Frequency - Transition:-
  • Power - Max:300mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:SOT-666

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PEMB14,115

Overview

The PEMB14,115 is a PNP/PNP resistor-equipped transistor housed in the SOT666 plastic surface-mounted package. It integrates two PNP transistors with one built-in bias resistor (R1) of 47 kΩ on the input side, while the second transistor's resistor remains open. Key electrical parameters include a collector-emitter voltage (VCEO) of -50 V and a DC output current (IO) of -100 mA per transistor. The device features a total power dissipation of 300 mW at an ambient temperature of 25 °C, with a thermal resistance from junction to ambient of 416 K/W for the complete device.

Feature Summary

  • Integrates built-in bias resistors to simplify circuit design
  • Reduces component count by combining transistors and resistors
  • Lowers pick and place costs through compact packaging

Applications

  • Low current peripheral driver
  • Control of IC inputs
  • Replacement of general-purpose transistors in digital applications

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packing method and orientation. Confirm that the SOT666 package variant matches the required footprint for the target PCB layout. Cross-reference the marking code '5A' with the datasheet to validate authenticity and production origin before integration into the supply chain.

Selection Notes

Select this component when space constraints require replacing discrete transistors and external base resistors. Ensure the application operates within the -50 V collector-emitter voltage limit and stays below the 300 mW total power dissipation threshold at 25 °C. Verify that the 47 kΩ internal bias resistor aligns with the required drive current levels for the connected load or IC input.

Part Context

The PEMB14 belongs to Nexperia's family of resistor-equipped transistors designed for high-density circuitry. It serves as a functional alternative to using separate PNP transistors and discrete resistors, offering a consolidated solution in the SOT666 package. This integration supports miniaturization goals in consumer and industrial electronics where board real estate is limited.

Replacement Considerations

The PUMB14 offers a similar function but utilizes the SOT363 (SC-88) package instead of SOT666. Designers must verify pin compatibility and physical footprint differences before substituting between these package types.

FAQ

What is the value of the built-in bias resistor?

The bias resistor R1 has a typical value of 47 kΩ, with a minimum of 33 kΩ and a maximum of 61 kΩ.

How many leads does the PEMB14 package contain?

The PEMB14 is housed in the SOT666 package, which contains 6 leads.

What is the maximum storage temperature range?

The storage temperature range extends from -65 °C to +150 °C.

PEMB14,115PEMB14,115

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