PEMB15,115

Overview

The PEMB15,115 is a PNP/PNP double Resistor-Equipped Transistor (RET) housed in a SOT666 surface-mounted package. It features two integrated PNP transistors with built-in bias resistors, where R1 and R2 are both 4.7 kΩ. The device supports a collector-emitter voltage of -50 V and an output current of -100 mA per transistor. Total power dissipation is rated at 300 mW at 25 °C ambient temperature. The component meets AEC-Q101 qualification standards for automotive applications.

Feature Summary

• Integrates dual PNP transistors with built-in bias resistors to reduce component count
• AEC-Q101 qualified for automotive reliability requirements
• Simplifies circuit design by replacing general-purpose transistors in digital applications

Applications

• Low current peripheral driver
• Control of IC inputs
• Digital applications requiring resistor-equipped transistors

Procurement Notes

Verify the specific suffix

Selection Notes

Select the PEMB15 variant when the SOT666 package configuration is required for the design. Ensure the application operates within the -50 V collector-emitter voltage limit and -100 mA output current constraints. Verify that the 4.7 kΩ internal bias resistors align with the intended logic interface levels and drive requirements.

Part Context

The PEMB15 belongs to the PEMB/PUMB series of PNP/PNP resistor-equipped transistors manufactured by Nexperia. It serves as the SOT666 packaged counterpart to the PUMB15, which utilizes the SC-88 (SOT363) package. Both devices share identical electrical characteristics but differ in physical footprint and lead configuration.

Replacement Considerations

The PEMH15 is a documented NPN/NPN complement within the same product family. Designers requiring complementary switching should verify pinout compatibility and electrical symmetry between the PNP and NPN variants before substitution.