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The PEMB17 is a PNP/PNP resistor-equipped transistor housed in an SOT666 plastic surface-mounted package with six leads. It integrates two bias resistors, R1 and R2, with nominal values of 47 kΩ and 22 kΩ respectively. The device supports a collector-emitter voltage (VCEO) of -50 V and a DC output current (IO) of -100 mA. Total power dissipation is rated at 300 mW per device at 25 °C ambient temperature. The junction-to-ambient thermal resistance is 416 K/W for the complete device.
Verify the specific ordering suffix to confirm the manufacturing origin, as codes indicate production in Hong Kong, Malaysia, or China. Confirm the package type matches the required footprint, as the complement model PUMB17 utilizes the SOT363 package instead of the SOT666 used by the PEMB17. Ensure compatibility with reflow soldering methods only.
Select this component when a compact PNP solution with integrated base biasing is required for low-current switching tasks. Verify that the -50 V collector-emitter voltage rating meets the system's maximum stress requirements. Consider the SOT666 package dimensions against available board space constraints.
This component belongs to the family of resistor-equipped transistors designed to replace discrete general-purpose transistors in digital logic circuits. It serves as a simplified alternative to separate transistor and resistor combinations, streamlining assembly processes for consumer and industrial electronics.
The PEMD17 is listed as the NPN/NPN complement within the same product family. Designers requiring an NPN configuration should verify the specific electrical characteristics of the complement part rather than assuming symmetry.