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The PEMB18,115 is a dual pre-biased NPN/PNP digital transistor array manufactured by Nexperia USA Inc. It features an SOT-666 surface-mount package with six terminals. The device supports a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. Internal biasing includes a typical base resistor of 4.7 kOhms and an emitter resistor ratio of 0.47. Operating temperatures range from -65 C to +150 C. The component is classified as Not Recommended for New Designs (NRND) and utilizes reel or cut tape packaging options.
Verify the Not Recommended for New Design (NRND) status before initiating procurement, as this indicates potential discontinuation or limited future availability. Confirm that existing inventory sources can sustain long-term supply requirements. Ensure compatibility with the specified SOT-666 footprint during assembly planning. Review datasheet revisions for any historical changes to electrical characteristics or pin configurations prior to finalizing orders.
Select this component when a design requires both NPN and PNP switching capabilities in a minimal footprint. The integrated biasing resistors eliminate the need for external discrete components, reducing board space and assembly complexity. Verify that the 50 V voltage rating and 100 mA current limits align with the specific load requirements of the target application circuit.
This part belongs to the PEMB series of dual pre-biased transistors from Nexperia. It combines complementary NPN and PNP structures into one package, offering a solution for applications needing both polarities. The SOT-666 package provides a small form factor suitable for dense PCB layouts. This series is designed to replace multiple discrete transistors and resistors, simplifying schematic design and manufacturing processes.
PEMH18,115 serves as a functional substitute due to identical NPN/PNP configuration, matching 50 V/100 mA ratings, and compatible SOT-666 package dimensions.