PEMB20,115

Overview

The PEMB20,115 is a PNP/PNP Resistor-Equipped Transistor (RET) housed in an SOT666 ultra-small and flat lead Surface-Mounted Device plastic package. It features built-in bias resistors with R1 = 2.2 kΩ and R2 = 2.2 kΩ. The device supports a collector-emitter voltage of -50 V and an output current of -100 mA per transistor. Total power dissipation is rated at 300 mW per device at 25 °C ambient temperature. The junction temperature maximum is 150 °C, with an operating temperature range from -65 °C to +150 °C.

Feature Summary

• Built-in bias resistors simplify circuit design by reducing component count and pick-and-place costs.

Applications

• Low current peripheral driver
• Control of IC inputs
• Replacement of general-purpose transistors in digital applications

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component for designs requiring dual PNP switching with integrated base biasing. The SOT666 package offers space savings compared to discrete resistor-transistor combinations. Ensure thermal management accounts for the 300 mW total power dissipation limit when mounting on standard FR4 PCBs.

Part Context

This part belongs to Nexperia's family of Resistor-Equipped Transistors designed to replace multiple discrete components. It serves as a compact solution for logic interfacing and low-power switching tasks where board real estate is constrained.

Replacement Considerations

The PEMH20 is the NPN/NPN complement, while the PEMD20 is the NPN/PNP complement within the same series.