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Product Detailed Parameters
- Description：NEXPERIA PEMB3 - SMALL SIGNAL BI
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Bulk
- Transistor Type：2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max)：100mA
- Voltage - Collector Emitter Breakdown (Max)：50V
- Resistor - Base (R1)：4.7kOhms
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：200 @ 1mA, 5V
- pa_vce-saturation-max-ib-ic：
- Current - Collector Cutoff (Max)：1µA
- Frequency - Transition：-
- Power - Max：300mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-666
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Overview
The PEMB3,115 is a dual N-channel enhancement mode MOSFET manufactured by Nexperia. It utilizes the MLPAK33-WF surface-mount package and operates with a maximum drain-source voltage of 20 V and a continuous drain current of 4 A. The device features a low on-state resistance of 28 mΩ at a gate drive of 4.5 V. Thermal performance includes a junction-to-ambient thermal resistance of 62 K/W. The component is qualified to AEC-Q101 standards for automotive applications and supports a maximum operating temperature of 150°C.
Feature Summary
- Dual configuration integrating two independent N-channel MOSFETs within a single compact footprint
- Low on-state resistance optimized for efficient power switching in space-constrained designs
- Automotive qualification ensuring reliability under rigorous environmental and operational conditions
Applications
- DC-DC converter circuits requiring compact dual-switch solutions
- Motor control systems utilizing low-voltage power stages
- Load switching applications in automotive electronic modules
Procurement Notes
Verify the specific ordering code against official Nexperia documentation to ensure correct package variant and tape-and-reel specifications. Confirm that the intended application environment aligns with the specified thermal and electrical ratings. Check for any recent lifecycle status updates or recommended replacement parts before finalizing procurement plans.
Selection Notes
Select this component when a dual N-channel topology is required within a minimal board area. Ensure the system voltage does not exceed the 20 V rating and that the thermal design accommodates the specified power dissipation limits. Verify compatibility with the driving logic levels given the threshold characteristics defined in the datasheet.
Part Context
This part belongs to Nexperia's portfolio of small-signal and power MOSFETs designed for high-density electronics. The MLPAK33-WF package provides a leadless solution with side-wettable flanks for improved solder joint visibility and reliability compared to traditional packages.
Replacement Considerations
Consult official Nexperia substitution guides for verified equivalents. Generic replacements may differ in thermal resistance or pinout configuration.
