SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The PEMD10,115 is a Resistor-Equipped Transistor (RET) double transistor containing one NPN and one PNP unit in an SOT666 surface-mount package. It features built-in bias resistors with R1 at 2.2 kΩ and R2 at 47 kΩ. The device supports a maximum collector-emitter voltage of 50 V and a continuous output current of 100 mA per transistor. Total power dissipation is rated at 300 mW for the device and 200 mW per transistor at 25 °C ambient temperature. The transition frequency reaches 230 MHz for the NPN section and 180 MHz for the PNP section.
Verify the specific ordering suffix matches the required tape and reel configuration before procurement. Confirm that the non-automotive qualification status aligns with the target application requirements. Ensure the SOT666 footprint dimensions are compatible with the intended PCB layout and soldering process specifications.
Select this component when space constraints require a dual transistor solution with integrated base resistors. Compare the 2.2 kΩ input resistance against logic gate output capabilities to ensure proper drive levels. Evaluate the total power dissipation limits under expected thermal conditions to prevent junction temperature exceedance during operation.
This part belongs to Nexperia's PEMD series of resistor-equipped double transistors. It serves as the NPN/PNP complement to the PEMH10 (NPN/NPN) and PEMB10 (PNP/PNP) variants. All members share the same SOT666 package and similar electrical characteristics tailored for complementary or identical polarity configurations.
Direct functional substitutes within the same family include PEMH10 and PEMB10. Verify pin compatibility and internal resistor values when cross-referencing with other manufacturers' RET arrays.