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Product Detailed Parameters
- Description：TRANS PREBIAS 1NPN 1PNP SOT666
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max)：100mA
- Voltage - Collector Emitter Breakdown (Max)：50V
- Resistor - Base (R1)：47kOhms
- Resistor - Emitter Base (R2)：47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 5mA, 5V
- pa_vce-saturation-max-ib-ic：
- Current - Collector Cutoff (Max)：1µA
- Frequency - Transition：-
- Power - Max：300mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-666
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Overview
The PEMD12,315 is a Resistor-Equipped Transistor (RET) double transistor containing one NPN and one PNP bipolar junction transistor within an SOT666 surface-mount package. It features built-in bias resistors with R1 = 47 kΩ and R2 = 47 kΩ. The device supports a collector-emitter voltage of 50 V and an output current of 100 mA per transistor. Total power dissipation is rated at 300 mW at 25 °C ambient temperature. The component operates within an ambient temperature range of -65 °C to +150 °C.
Feature Summary
- Integrates NPN and PNP transistors with pre-biased resistors to simplify circuit design
- Reduces component count and pick-and-place costs in assembly processes
- Ultra-small and flat lead plastic package for high-density applications
Applications
- Low current peripheral driver circuits
- Controlling IC inputs
- Replacement of general purpose transistors in digital applications
Procurement Notes
Verify the specific ordering suffix
Selection Notes
Select this component when space constraints require a dual transistor solution with integrated biasing. Ensure the application does not exceed the 300 mW total power dissipation limit without adequate thermal management on an FR4 PCB. Confirm that the 50 V breakdown voltage and 100 mA current ratings align with the target circuit requirements.
Part Context
The PEMD12 belongs to Nexperia's family of resistor-equipped double transistors. Complementary configurations include the PEMH2 (NPN/NPN) and PEMB2 (PNP/PNP). This specific part number represents the production data sheet version released in December 2022, superseding previous preliminary specifications.
Replacement Considerations
Direct functional replacements include PEMH2 for NPN/NPN configurations and PEMB2 for PNP/PNP configurations. Verify pin compatibility and electrical parameters before substituting with other RET families.
FAQ
What are the values of the built-in bias resistors?
The typical value for both R1 (input bias resistor) and R2 is 47 kΩ.
Is the PEMD12 automotive qualified?
No, the product data sheet explicitly states that this product is not suitable for automotive use and is not qualified according to automotive testing or application requirements.
What is the maximum total power dissipation?
The maximum total power dissipation is 300 mW when the ambient temperature is less than or equal to 25 °C.
