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Product Detailed Parameters
- Description：TRANS PREBIAS 1NPN 1PNP SOT666
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max)：100mA
- Voltage - Collector Emitter Breakdown (Max)：50V
- Resistor - Base (R1)：22kOhms
- Resistor - Emitter Base (R2)：47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 5mA, 5V
- pa_vce-saturation-max-ib-ic：
- Current - Collector Cutoff (Max)：1µA
- Frequency - Transition：-
- Power - Max：300mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-666
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Overview
The PEMD16,115 is a dual Resistor-Equipped Transistor (RET) featuring one NPN and one PNP transistor in an SOT666 surface-mount package. It provides a collector-emitter voltage (VCEO) of 50 V and an output current capability of 100 mA per transistor. The device integrates bias resistors with a nominal R1 value of 22 kΩ and R2 of 47 kΩ. Total power dissipation is rated at 300 mW at 25 °C ambient temperature. The component operates within an ambient temperature range of -65 °C to +150 °C.
Feature Summary
- Integrates NPN and PNP transistors with built-in bias resistors to simplify circuit design.
- Reduces component count and pick-and-place costs compared to discrete solutions.
- Ultra-small and flat lead SMD plastic package for high-density layouts.
Applications
- Low current peripheral driver
- Controlling IC inputs
- Replacement of general purpose transistors in digital applications
Procurement Notes
Verify the specific ordering suffix matches the required packaging configuration before purchase. Confirm that the application environment remains within the specified thermal limits to ensure reliability. Check the latest Nexperia documentation for any updates regarding product status or recommended soldering profiles prior to finalizing procurement plans.
Selection Notes
Select this component when space constraints require a compact dual-transistor solution with integrated biasing. Ensure the required collector-emitter voltage does not exceed 50 V and the load current stays within the 100 mA limit. Verify that the internal resistor values align with the target logic levels and drive requirements of the connected circuits.
Part Context
This part belongs to Nexperia's family of Resistor-Equipped Transistors (RETs). Complementary configurations include the PEMH16 for NPN/NPN pairs and the PEMB16 for PNP/PNP pairs. These devices are designed to replace multiple discrete components, offering a streamlined alternative for standard digital switching applications.
Replacement Considerations
Direct functional replacements include PEMH16 for NPN/NPN configurations and PEMB16 for PNP/PNP configurations. Verify pinout compatibility and electrical ratings when substituting with other RET families or discrete transistor pairs.
