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The PEMD2,315 is a dual pre-biased transistor array manufactured by Nexperia USA Inc., housed in an SOT-666 surface-mount package. It integrates one NPN and one PNP bipolar junction transistor (BJT) with built-in biasing resistors. The device supports a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. Key electrical parameters include a DC current gain (hFE) minimum of 60 at 5 mA and 5 V, and a saturation voltage (VCEsat) maximum of 150 mV at 500 µA base current and 10 mA collector current. The unit features a maximum power dissipation of 300 mW and operates within a temperature range of -55°C to +150°C.
Verify the specific suffix '315' corresponds to the required tape-and-reel packaging configuration before ordering. Confirm that the SOT-666 footprint matches the target PCB design. Ensure compliance with RoHS and REACH regulations as stated in the manufacturer's environmental documentation. Check for any obsolescence notices or recommended new designations from Nexperia.
Select this component when a dual transistor solution with integrated biasing is required to reduce board space and assembly complexity. Compare the 300 mW power dissipation limit against thermal requirements. Verify that the 50 V breakdown voltage meets the circuit's operational limits. Consider the SOT-666 package dimensions for mechanical fit.
The PEMD2 series represents a family of dual pre-biased transistors offered by Nexperia. The PEMD2,315 variant specifically utilizes the SOT-666 package, which is also known as SOT6. This package type is distinct from other variants like the SOT-563 used in similar onsemi products. The part is categorized under discrete semiconductor transistors and arrays.
Direct substitutes may include the NSBC124EPDXV6T1G from onsemi, which offers similar NPN/PNP dual pre-biased functionality in a SOT-563 package. Note that package differences require PCB layout adjustments. Verify pinout compatibility and electrical parameter equivalence before substitution.