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Product Detailed Parameters
- Description：TRANS PREBIAS 1NPN 1PNP SOT666
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max)：100mA
- Voltage - Collector Emitter Breakdown (Max)：50V
- Resistor - Base (R1)：2.2kOhms
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：30 @ 20mA, 5V
- pa_vce-saturation-max-ib-ic：
- Current - Collector Cutoff (Max)：1µA
- Frequency - Transition：-
- Power - Max：300mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-666
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Overview
The Nexperia PEMD30,115 is a dual Resistor-Equipped Transistor (RET) featuring an NPN/PNP complement in a SOT666 surface-mount package. It provides a 100 mA output current capability with a collector-emitter voltage of 50 V and a collector-base voltage of 50 V. The device includes a built-in input bias resistor (R1) of 2.2 kΩ, while the second resistor (R2) remains open. Total power dissipation is rated at 200 mW per transistor and 300 mW for the entire device at 25 °C ambient temperature. The unit operates within a junction temperature range up to 150 °C.
Feature Summary
- Integrates NPN and PNP transistors with a single built-in bias resistor to simplify circuit design.
- Reduces component count and pick-and-place costs compared to discrete solutions.
- Offers high output current capability suitable for low-current peripheral driving tasks.
Applications
- Low current peripheral driver
- Controlling IC inputs
- Switching loads
Procurement Notes
Verify that the specific part number matches the required electrical characteristics, particularly the 2.2 kΩ internal bias resistor configuration. Confirm the SOT666 package dimensions align with the PCB footprint layout. Ensure the application environment stays within the specified thermal limits to maintain reliability.
Selection Notes
Select this component when space constraints require a compact dual-transistor solution with integrated biasing. Compare against discrete BJT pairs to evaluate assembly cost savings. Verify that the 50 V voltage rating meets the system requirements. Consider the non-automotive qualification status if used in standard consumer electronics.
Part Context
This device belongs to the PEMD30 family of resistor-equipped double transistors. It serves as a compact alternative to discrete transistor pairs, offering a simplified design approach for switching applications. The SOT666 package allows for efficient board space utilization in modern electronic designs requiring multiple logic or switching elements.
Replacement Considerations
The PEMH30 is the NPN/NPN complement, and the PEMB30 is the PNP/PNP complement within the same series. These parts share identical packaging and general form factors but differ in transistor polarity configurations.
