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The Nexperia PEMD30,315 is a Resistor-Equipped Transistor (RET) double transistor housed in an SOT666 surface-mount package. It integrates one NPN and one PNP transistor with a built-in 2.2 kΩ bias resistor on the NPN input; the PNP input has no series resistor. The device supports a maximum collector-emitter voltage of 50 V and a continuous output current of 100 mA per transistor. Total power dissipation is rated at 300 mW at 25 °C ambient temperature. The component operates within a junction temperature range up to 150 °C and features a thermal resistance from junction to ambient of 416 K/W.
Verify the specific ordering suffix matches the required tape and reel quantity. Confirm that the non-automotive qualification status aligns with the target application environment. Ensure the SOT666 footprint dimensions are compatible with the PCB layout constraints before finalizing procurement orders.
Select this component when space-constrained designs require dual complementary transistors with integrated biasing. The PEMD30 serves as a direct alternative to discrete BC847BVN configurations. Verify that the 2.2 kΩ internal resistor value meets the specific drive requirements for the connected logic or load interface.
The PEMD30 belongs to Nexperia's family of Resistor-Equipped Transistors designed to minimize board space. Complementary variants include the PEMH30 for NPN/NPN configurations and the PEMB30 for PNP/PNP setups. This specific part number represents the production data sheet version released in January 2023.
Direct functional equivalents include the PEMH30 for NPN/NPN pairs and PEMB30 for PNP/PNP pairs. Discrete BC847BVN components may serve as a manual replacement if board space allows.