PEMD3,115

PEMD3,115

$0.38
  • Description:TRANS PREBIAS 1NPN 1PNP SOT666
  • Series:-

SKU:d8751694ce79 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS 1NPN 1PNP SOT666
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):10kOhms
  • Resistor - Emitter Base (R2):10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 5mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):1µA
  • Frequency - Transition:-
  • Power - Max:300mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:SOT-666

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PEMD3,115

Overview

The PEMD3,115 is a dual transistor array manufactured by Nexperia, featuring one NPN and one PNP bipolar junction transistor in an isolated configuration. Housed in a compact SOT-666 surface-mount package with six pins, this component supports a maximum continuous collector current of 100 mA. It provides a collector-emitter voltage (VCEO) and collector-base voltage (VCBO) rating of 50 V, while the emitter-base voltage (VEBO) is rated at 10 V. The device exhibits a maximum power dissipation of 200 mW and a minimum DC current gain (hFE) of 30. Operating within a temperature range from -65°C to +150°C, it includes a transition frequency (ft) of 230 MHz and complies with AEC-Q101 automotive standards.

Feature Summary

  • Dual isolation architecture integrating separate NPN and PNP transistors within a single package for space-efficient circuit design.
  • Automotive-grade reliability certified under AEC-Q101 standards, ensuring robust performance in demanding vehicle environments.
  • High thermal stability capable of operating up to 150°C, suitable for applications requiring extended temperature resilience.

Applications

  • Automotive logic switching circuits requiring isolated NPN/PNP pairs.
  • General-purpose digital signal processing interfaces.
  • Low-power analog switching applications.

Procurement Notes

Verify the specific ordering suffix and packaging format against official Nexperia documentation prior to procurement. Confirm that the delivered components match the specified SOT-666 package dimensions and pinout configuration. Ensure compliance with relevant automotive quality standards if the application requires AEC-Q101 certification. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and traceability.

Selection Notes

Select the PEMD3,115 when a compact solution for simultaneous NPN and PNP switching is required in space-constrained designs. Consider its 50 V voltage ratings and 100 mA current capacity for low-to-medium power logic applications. Evaluate the 200 mW power dissipation limit relative to the expected thermal environment. Verify that the SOT-666 footprint aligns with the printed circuit board layout constraints.

Part Context

The PEMD3,115 belongs to the PEMD3 series of dual transistor arrays produced by Nexperia. This series is designed to replace discrete transistor pairs, reducing board space and assembly complexity. The component utilizes standard bipolar junction transistor technology optimized for surface-mount integration. It serves as a fundamental building block for digital and analog switching functions in consumer and automotive electronics.

Replacement Considerations

Consult official Nexperia substitution guides for verified equivalent parts. Ensure any replacement maintains identical pinout, voltage ratings, and package dimensions. Verify that alternative components meet the same AEC-Q101 requirements if applicable to the original design specifications.

PEMD3,115PEMD3,115
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