PEMH10,115

PEMH10,115

$0.40
  • Description:TRANS PREBIAS 2NPN 50V SOT666
  • Series:-

SKU:0ba7271b523c Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS 2NPN 50V SOT666
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):2.2kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 100mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):1µA
  • Frequency - Transition:-
  • Power - Max:300mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:SOT-666

Download product information

PEMH10,115

Overview

The PEMH10,115 is a dual NPN resistor-equipped transistor (RET) housed in an SOT666 surface-mount package. It integrates two NPN transistors with built-in bias resistors: R1 is nominally 2.2 kΩ and R2 is nominally 47 kΩ. The device supports a maximum collector-emitter voltage of 50 V and a continuous output current of 100 mA per transistor. Total power dissipation is rated at 300 mW for the device and 200 mW per transistor at 25 °C ambient temperature. The transition frequency reaches 230 MHz, and the DC current gain is typically 100 at 10 mA.

Feature Summary

  • Integrates dual NPN transistors with fixed internal bias resistors to reduce external component count.
  • Features ultra-small SOT666 packaging with flat leads for efficient PCB space utilization.
  • Simplifies circuit design by eliminating external base drive resistors.

Applications

  • Low current peripheral driver circuits
  • Controlling IC inputs
  • Replacing general-purpose transistors in digital applications

Procurement Notes

Verify the specific suffix '115' corresponds to the standard reel packing configuration defined in the ordering information. Confirm that the application does not require automotive qualification, as this product data sheet explicitly states the product is non-automotive qualified. Ensure thermal management aligns with the specified junction-to-ambient resistance values.

Selection Notes

Select this component when a dual NPN configuration with integrated biasing is required. The nominal R1 value of 2.2 kΩ and R2 value of 47 kΩ are fixed; verify these ratios meet the specific input impedance requirements of the driving source. Consider the 50 V voltage rating and 100 mA current limit against the peak load conditions.

Part Context

This part belongs to Nexperia's Resistor-Equipped Transistor (RET) family. It serves as the NPN/NPN complement to the PEMD10 (NPN/PNP) and PEMB10 (PNP/PNP). All variants share the same SOT666 physical footprint and pinout structure, differing only in internal transistor polarity and resistor values.

Replacement Considerations

Direct functional replacements within the same series include PEMD10,115 and PEMB10,115. For single-transistor equivalents, PUMH10,115 offers a similar NPN RET configuration in the same package.

PEMH10,115PEMH10,115
$0.40
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