SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Nexperia PEMH11,115 is a dual NPN resistor-equipped transistor (RET) housed in an ultra-small SOT666 surface-mount package. It integrates two independent NPN transistors with built-in bias resistors, where R1 and R2 are typically 10 kΩ each. The device supports a maximum collector-emitter voltage of 50 V and a continuous output current of 100 mA per transistor. Total power dissipation is rated at 300 mW for the device and 200 mW per transistor at 25 °C ambient temperature. The component operates within a junction temperature range up to 150 °C and an ambient temperature range from -65 °C to +150 °C.
Verify the specific ordering suffix against the manufacturer's current catalog to confirm packaging details and availability status. Confirm that the non-automotive qualified version meets the environmental requirements for the intended application, as automotive qualification requires specific product variants.
Select this component when space constraints require a dual NPN configuration with integrated base resistors. Ensure the required input resistance matches the standard 10 kΩ value or verify if alternative ratios are needed. Check thermal derating curves if operating near the maximum power dissipation limits.
The PEMH11 belongs to the Nexperia Resistor-Equipped Transistor family, designed to replace discrete transistor and resistor combinations. It serves as the NPN/NPN complement to devices like the PEMD3 (NPN/PNP) and PEMB11 (PNP/PNP). This series is engineered for high-density digital logic and interface circuits.
Direct functional substitutes include the PUMH11, which shares identical electrical characteristics but may differ in automotive qualification status. Verify pinout compatibility and package dimensions before substitution.