PEMH1,115

Overview

The PEMH1,115 is a dual NPN digital transistor array manufactured by Nexperia USA Inc. It integrates two NPN transistors with built-in biasing resistors into a single SOT-666 surface-mount package. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA. Each transistor includes a base resistor (R1) of 4.7 kΩ and an emitter resistor (R2) of 4.7 kΩ. The unit operates within a temperature range of -65°C to +150°C and has a maximum power dissipation (Pd) of 300 mW.

Feature Summary

• Integrates two NPN transistors with pre-biased resistors in a compact SOT-666 package
• Simplifies circuit design by reducing component count and PCB footprint
• Provides stable switching performance with integrated base and emitter resistors

Applications

• General-purpose switching applications
• Driver circuits for low-power loads
• Logic level translation interfaces

Procurement Notes

Verify the specific suffix 115 to confirm tape-and-reel packaging configuration. Confirm AEC-Q101 qualification status if automotive compliance is required. Check current lifecycle status as some variants may be marked as not recommended for new designs. Ensure compatibility with standard SMT pick-and-place equipment for the SOT-666 footprint.

Selection Notes

Select this component when a dual NPN switch with fixed biasing is needed. The 4.7 kΩ base resistor suits moderate drive currents. Compare against PUMH1 series for identical electrical characteristics but verify pinout compatibility between SOT-666 and alternative packages before substitution.

Part Context

This part belongs to the PEMH series of dual NPN digital transistors. It serves as a space-saving alternative to discrete transistor and resistor combinations. The SOT-666 package allows for higher density mounting compared to individual SOT-323 devices.

Replacement Considerations

PUMH1,115 offers equivalent electrical specifications and pinout compatibility within the same package family.