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The PEMH11,315 is a dual NPN resistor-equipped transistor (RET) housed in an ultra-small SOT666 surface-mount package. It integrates two NPN transistors with built-in bias resistors (R1 = 10 kΩ, R2 = 10 kΩ). Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V and a continuous output current (IO) of 100 mA per transistor. The device supports a total power dissipation of 300 mW at 25 °C ambient temperature, with a junction temperature limit of 150 °C. It operates within an ambient temperature range of -65 °C to +150 °C.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details and availability status. Confirm that the procurement channel provides valid traceability for the Nexperia brand. Ensure the received components match the marking code 'H1' corresponding to the PEMH11 type number before integration into production workflows.
Select this component when a dual NPN configuration with integrated base resistors is required to minimize board space. The SOT666 package offers a compact footprint suitable for high-density designs. Verify that the 50 V collector-emitter voltage rating meets the circuit requirements. Consider the thermal resistance characteristics if operating near the maximum power dissipation limits.
The PEMH11 belongs to the family of Resistor-Equipped Transistors (RETs) manufactured by Nexperia. It serves as the NPN/NPN complement to other variants such as the PEMD3 (NPN/PNP) and PEMB11 (PNP/PNP). This series is designed to replace multiple discrete components, offering a cost-effective solution for digital switching and logic interface applications.
Direct functional replacements within the same package and specification include PEMD3 and PEMB11, depending on the required transistor polarity combination. For single-transistor equivalents, PUMH11 may be considered if only one channel is needed. Verify pin compatibility and resistor values when substituting with other RET families.