PEMH13,115

Overview

The Nexperia PEMH13,115 is a dual NPN resistor-equipped transistor (RET) housed in an SOT666 surface-mount package. It integrates two NPN transistors with built-in bias resistors: R1 is 4.7 kΩ and R2 is 47 kΩ. The device supports a maximum collector-emitter voltage of 50 V and a continuous output current of 100 mA per transistor. Total power dissipation is rated at 200 mW per transistor and 300 mW for the entire device at 25 °C ambient temperature. The transition frequency reaches 230 MHz, and the DC current gain is typically 100 at 10 mA.

Feature Summary

• Integrates dual NPN transistors with fixed internal bias resistors to reduce component count
• Simplifies circuit design by eliminating external base drive components
• Ultra-small SOT666 package reduces pick-and-place costs and PCB area

Applications

• Low current peripheral driver circuits
• Controlling IC inputs
• Replacement of general purpose transistors in digital applications

Procurement Notes

Verify that the specific order suffix matches the required packaging format, as standard data sheets may omit packing details. Confirm non-automotive qualification status if the application requires automotive-grade reliability standards. Ensure the ordering code aligns with the exact resistor values and pin configuration documented in the official product specification.

Selection Notes

Select this component when a compact dual NPN solution with integrated biasing is required. The fixed R1 and R2 values suit low-current switching tasks where precise base drive control is unnecessary. Verify that the 50 V breakdown voltage and 100 mA current limits accommodate the target load requirements without exceeding thermal constraints.

Part Context

This part belongs to the PEMH series of NPN/NPN resistor-equipped double transistors. Complementary variants include the PEMD13 for NPN/PNP configurations and the PEMB13 for PNP/PNP setups. All share the same SOT666 footprint, facilitating standardized board layouts for different logic polarities within the same product family.

Replacement Considerations

Direct replacements must match the SOT666 package and dual NPN RET topology. Verify equivalent R1 (4.7 kΩ) and R2 (47 kΩ) values to maintain identical bias characteristics. Check that the substitute device offers comparable VCEO, IO, and thermal resistance specifications.