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The PEMH13,315 is a dual NPN resistor-equipped transistor (RET) manufactured by Nexperia. It integrates two NPN transistors with built-in bias resistors in an ultra-small SOT666 surface-mount package measuring 1.6 mm x 1.2 mm x 0.55 mm. The device supports a collector-emitter voltage of 50 V and a continuous output current of 100 mA per transistor. Typical internal resistance values are R1 = 4.7 kΩ and R2 = 47 kΩ, yielding a ratio of 10. Total power dissipation is rated at 200 mW per transistor and 300 mW for the complete device at 25 °C ambient temperature.
Verify the specific ordering suffix matches the required packaging format before procurement. Confirm that the product status aligns with current design requirements, as manufacturing statuses may change. Ensure compliance with RoHS directives and check for any regional export control restrictions applicable to the final destination.
Select this component when a dual NPN configuration with integrated biasing is required. Verify that the 4.7 kΩ input resistance and 47 kΩ feedback resistance meet the specific logic interface requirements. Ensure the thermal management strategy accounts for the 200 mW per-transistor dissipation limit on standard FR4 PCB footprints.
This part belongs to the PEMH series of NPN/NPN resistor-equipped double transistors. It serves as the NPN counterpart to the PEMD13 (NPN/PNP) and PEMB13 (PNP/PNP) variants. All share the same SOT666 package dimensions and pinout structure, facilitating consistent board layout across different polarity configurations.
Direct functional substitutes within the same family include PEMD13 and PEMB13, provided the complementary transistor polarities match the circuit requirements. Cross-family replacements require verification of matching VCEO, IO, and internal resistor ratios.