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The PEMH14,115 is a dual NPN Resistor-Equipped Transistor (RET) housed in an SOT666 surface-mounted package. It integrates two NPN transistors with built-in bias resistors to simplify circuit design and reduce component count. The device features a collector-emitter voltage of 50 V and a continuous output current of 100 mA per transistor. Each input includes a nominal 47 kΩ bias resistor (R1), while the second resistor (R2) remains open. Total power dissipation is rated at 300 mW per device at 25 °C ambient temperature.
Verify the specific Nexperia product status before procurement, as availability may change. Confirm that the non-automotive qualified designation aligns with your application requirements. Ensure compliance with RoHS directives and REACH regulations during sourcing. Check for any recent revision history updates that might affect specifications or marking codes prior to finalizing orders.
Select this component when a dual NPN configuration with integrated base biasing is required. The 47 kΩ internal resistor value suits standard logic interface applications. Consider the SOT666 package dimensions for PCB layout constraints. Verify thermal performance against the derating curve if operating near maximum ambient temperatures.
This part belongs to the PEMH series of NPN/NPN resistor-equipped transistors. It serves as the NPN complement to the PEMD14 (NPN/PNP) and PEMB14 (PNP/PNP) variants. All share the same SOT666 package and general electrical characteristics but differ in transistor polarity combinations.
Direct functional substitutes include other dual NPN RETs in SOT666 packages from various manufacturers. Ensure replacement parts match the 50 V rating, 100 mA current limit, and 47 kΩ bias resistance. Verify pinout compatibility to avoid redesigning the footprint.