SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Nexperia PEMH15,115 is a dual NPN resistor-equipped transistor (RET) housed in an SOT666 surface-mount package. It integrates two NPN transistors with built-in bias resistors, R1 and R2, both nominally 4.7 kΩ. The device supports a maximum collector-emitter voltage of 50 V and an output current capability of 100 mA per transistor. Total power dissipation is rated at 300 mW at 25 °C ambient temperature. Key electrical characteristics include a DC current gain (hFE) of 30 at 10 mA and a transition frequency of 230 MHz.
Verify the specific ordering suffix matches the required packaging format before procurement. Confirm that the product status aligns with current design requirements, as the datasheet indicates this version is not automotive qualified. Ensure compliance with RoHS directives and check for any recent production change notices affecting availability or specifications.
Select the PEMH15 when a compact solution for driving low-current loads or interfacing with IC inputs is required. The integrated bias resistors eliminate the need for external base resistors, reducing board space. Verify that the 50 V collector-emitter voltage and 100 mA current limits meet the application's operational stress conditions.
The PEMH15 belongs to Nexperia's family of resistor-equipped transistors designed to replace multiple discrete components. It consolidates two NPN transistors and their associated biasing resistors into a single SOT666 package. This integration aids in miniaturizing electronic designs while maintaining reliable switching performance for digital logic interfaces.
Public confirmed substitute part numbers are not provided in the verified source material.