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The Nexperia PEMH16,115 is a dual NPN Resistor-Equipped Transistor (RET) housed in an SOT-666 surface-mount package. It integrates two NPN transistors with built-in bias resistors, featuring R1 values of 22 kΩ and R2 values of 47 kΩ per transistor. The device supports a collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IO) of 100 mA. Total power dissipation is rated at 300 mW per device and 200 mW per transistor at 25 °C ambient temperature. Operating junction temperatures range from -65 °C to +150 °C.
Verify the specific ordering suffix and marking code against the latest official datasheet before procurement. Confirm that the product status aligns with current design requirements, as manufacturing statuses may change. Ensure compatibility with standard reflow soldering methods recommended for the SOT-666 package to maintain device integrity during assembly processes.
Select the PEMH16 when a dual NPN configuration with specific 22 kΩ and 47 kΩ bias resistors is required. Compare total power dissipation limits against thermal constraints in the final application. Consider the SOT-666 footprint dimensions relative to available PCB real estate. Verify input voltage limits do not exceed the specified maximum ratings under all operating conditions.
This component belongs to the Nexperia Resistor-Equipped Transistor family, designed to consolidate multiple discrete components into a single surface-mount package. The PEMH16 specifically provides a dual NPN solution, complemented by variants such as the PEMD16 (NPN/PNP) and PEMB16 (PNP/PNP). These devices are engineered to streamline digital logic interfaces and reduce board space requirements.
Direct functional substitutes within the same series include PEMD16 and PEMB16, depending on the required transistor polarity combination. Verify pinout compatibility and electrical parameters when considering alternative packages or manufacturers.