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The PEMH17,115 is a dual NPN pre-biased transistor manufactured by Nexperia USA Inc. It integrates two independent NPN transistors with built-in bias resistors within a compact SOT-666 surface-mount package. The device features a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA. Each transistor channel includes a base resistor (R1) and an emitter resistor (R2), both specified at 4.7 kΩ. The component supports a maximum power dissipation of 300 mW and operates within a temperature range of -55 °C to +150 °C. It is designed for high-density digital switching applications requiring simplified circuit layouts.
Verify the specific suffix and tape-and-reel quantity against the manufacturer's latest datasheet before ordering. Confirm that the SOT-666 footprint matches the design board layout. Ensure compliance with RoHS and REACH regulations as stated in the official documentation. Check for any recent product change notices regarding marking or packaging updates.
Select this component when a dual NPN configuration with integrated biasing is required to minimize board space. Compare the 4.7 kΩ internal resistance values against the driving logic voltage levels to ensure adequate saturation. Verify that the 50 V breakdown voltage exceeds the maximum circuit operating voltage. Consider the thermal performance of the SOT-666 package under expected load conditions.
The PEMH17 belongs to Nexperia's family of pre-biased transistors, which combine bipolar junction transistors with onboard resistors. These devices are engineered to replace multiple discrete components, thereby simplifying assembly and improving reliability. The SOT-666 package is part of a standardized series of small-outline transistor packages widely used in portable and high-density electronic designs.
Publicly confirmed substitute part numbers for PEMH17,115 were not found in the provided source material. Consult the manufacturer's cross-reference guide for verified equivalents.