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The PEMH19,115 is a dual NPN resistor-equipped transistor (RET) manufactured by Nexperia USA Inc. It integrates two NPN transistors with built-in bias resistors in an ultra-small SOT666 surface-mounted package. The device features a collector-emitter voltage of 50 V and a continuous output current of 100 mA per transistor. Each input includes a typical bias resistor R1 of 22 kΩ, while the emitter resistor R2 remains open. Total power dissipation is rated at 300 mW per device at 25 °C ambient temperature. The component operates within an ambient temperature range of -65 °C to +150 °C.
Verify the specific ordering suffix
Select the PEMH19 when a dual NPN configuration with integrated base biasing is required for space-constrained designs. The 22 kΩ internal resistor simplifies drive circuits compared to discrete components. Ensure the application does not require automotive qualification, as this specific product data sheet indicates non-automotive qualification status.
The PEMH19 belongs to Nexperia's family of Resistor-Equipped Transistors (RETs). These devices combine bipolar junction transistors with pre-biased resistors to replace multiple discrete components. The SOT666 package provides a compact footprint suitable for high-density PCB layouts, offering a functional alternative to standard discrete NPN pairs in logic and switching circuits.
Check for equivalent RETs from other manufacturers that match the SOT666 package and 50V/100mA ratings. Verify pinout compatibility, specifically the arrangement of collectors and emitters in the dual NPN configuration, before substituting.