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The PEMH20,115 is an NPN/NPN resistor-equipped double transistor (RET) manufactured by Nexperia. It integrates two NPN transistors with built-in bias resistors in a compact SOT666 surface-mounted package. The device supports a maximum collector-emitter voltage of 50 V and a continuous output current of 100 mA per transistor. Each input includes a bias resistor R1 with a typical value of 2.2 kΩ, and the internal resistor ratio R2/R1 is typically 1. The component operates within an ambient temperature range of -65 °C to +150 °C and features a total power dissipation rating of 300 mW.
Verify the specific ordering suffix matches the required packaging format before procurement. Confirm that the application environment does not require automotive qualification, as this product is explicitly designated as non-automotive qualified. Ensure the PCB footprint aligns with the standard SOT666 soldering guidelines provided in the datasheet to maintain thermal performance.
Select the PEMH20,115 when a dual NPN configuration with integrated base resistors is required for space-constrained designs. The 2.2 kΩ input resistance is suitable for direct interfacing with standard logic outputs. Consider the 50 V collector-emitter voltage limit and 100 mA current capability against load requirements. Verify thermal constraints if operating near the upper temperature limits.
The PEMH20,115 belongs to Nexperia's family of resistor-equipped transistors designed to replace discrete resistor-transistor combinations. It serves as the NPN/NPN variant, complemented by the PEMD20 (NPN/PNP) and PEMB20 (PNP/PNP) models. This integration facilitates simplified schematic design and reduced assembly complexity for digital interface circuits.
Direct functional replacements include the PEMD20 for NPN/PNP configurations or the PEMB20 for PNP/PNP setups. For single-transistor applications requiring similar characteristics, verify compatibility with individual NPN devices equipped with external bias resistors.