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Product Detailed Parameters
- Description：TRANS PREBIAS 2NPN 50V SOT666
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max)：100mA
- Voltage - Collector Emitter Breakdown (Max)：50V
- Resistor - Base (R1)：47kOhms
- Resistor - Emitter Base (R2)：47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 5mA, 5V
- pa_vce-saturation-max-ib-ic：
- Current - Collector Cutoff (Max)：1µA
- Frequency - Transition：-
- Power - Max：300mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-666
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Overview
The Nexperia PEMH2,115 is a dual pre-biased NPN digital transistor housed in a SOT-666 surface-mount package. It integrates two NPN transistors with internal biasing resistors to simplify circuit design and reduce component count. The device supports a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. Total power dissipation is rated at 300 mW. The unit operates within a temperature range of -65°C to +150°C and meets AEC-Q101 automotive qualification standards.
Feature Summary
- Integrates two NPN transistors with built-in biasing resistors for simplified switching applications
- Compact SOT-666 package reduces printed circuit board area compared to discrete components
- Automotive qualified under AEC-Q101 standards for reliability in vehicle electronics
Applications
- Switching circuits in automotive electronic control units
- Logic level translation and buffering in embedded systems
- Driver stages for low-power loads in industrial equipment
Procurement Notes
Verify the specific ordering suffix and tape-and-reel quantity against the manufacturer's latest datasheet before procurement. Confirm RoHS compliance status and check for any product change notices related to resin or labeling updates. Ensure the selected distributor provides traceable documentation for automotive-grade requirements.
Selection Notes
Select this component when a dual NPN configuration with integrated base resistors is required in a compact footprint. Verify that the internal resistor values match the target logic interface voltages. Consider the 300 mW total power dissipation limit when designing thermal management for high-density layouts.
Part Context
This part belongs to the PEMH series of dual pre-biased NPN transistors from Nexperia. It serves as a space-saving alternative to using separate discrete transistors and resistors. The SOT-666 package allows for automated assembly while maintaining electrical performance suitable for both consumer and automotive applications.
Replacement Considerations
PEMH4,115: Dual NPN pre-biased transistor in SOT-666 package with different resistor values.
FAQ
What is the maximum operating temperature for the PEMH2,115?
The maximum junction temperature is specified as +150°C.
Does the PEMH2,115 meet automotive reliability standards?
Yes, the device is qualified according to the AEC-Q101 standard for stress test qualification of integrated circuits.
