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The PEMH30,115 is an NPN/NPN double Resistor-Equipped Transistor (RET) housed in a SOT666 plastic surface-mounted package. It features two integrated transistors with built-in bias resistors where R1 equals 2.2 kΩ and R2 remains open. The device supports a collector-emitter voltage of 50 V and provides an output current capability of 100 mA per transistor. Key electrical characteristics include a DC current gain of 30 at 20 mA collector current and a maximum collector-emitter saturation voltage of 150 mV at 10 mA. Total power dissipation is rated at 200 mW per transistor and 300 mW for the dual device at 25 °C ambient temperature.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm the exact packing method and pitch. The datasheet indicates that the -115 suffix corresponds to a 4 mm pitch tape and reel configuration. Confirming this detail ensures compatibility with automated placement equipment and prevents assembly errors related to tape specifications.
Select the PEMH30,115 when a compact dual NPN solution with fixed base resistance is required. The internal 2.2 kΩ resistor simplifies biasing networks, making it suitable for space-constrained designs. Ensure the application current does not exceed the 100 mA limit per transistor and verify thermal constraints relative to the 200 mW dissipation rating in free air.
This component belongs to the PEMH series of double Resistor-Equipped Transistors manufactured by Nexperia. It serves as the NPN/NPN complement within the family, distinct from the NPN/PNP PEMD30 or PNP/PNP PEMB30 variants. The SOT666 package offers a small footprint suitable for high-density surface mount applications requiring multiple switching elements.
The PEMH30,115 can be replaced by the PUMH30 if the SOT363 package is acceptable. For different polarity configurations, consider the PEMD30 for NPN/PNP or PEMB30 for PNP/PNP arrangements. Verify pinout compatibility and resistor values before substituting.