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The PEMH30,315 is an NPN/NPN double Resistor-Equipped Transistor (RET) housed in a SOT666 surface-mounted plastic package. It integrates two NPN transistors with built-in bias resistors where R1 equals 2.2 kΩ and R2 remains open. The device supports a collector-emitter voltage of 50 V and an output current of 100 mA per transistor. Total power dissipation reaches 200 mW per transistor and 300 mW for the dual device at 25 °C ambient temperature. Operating junction temperatures range from -65 °C to +150 °C.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm the exact packing method and tape pitch. Confirm that the SOT666 package version matches the required footprint dimensions for the target PCB layout before finalizing procurement orders.
Select this component when space constraints require a dual-transistor solution with integrated base resistors. Ensure the 2.2 kΩ internal resistance aligns with the driving source requirements. Verify thermal management capabilities as the total power dissipation is limited to 300 mW for the complete device under standard conditions.
This part belongs to the Resistor-Equipped Transistor family designed for compact digital switching applications. It serves as a direct replacement for discrete resistor-transistor networks, offering a simplified design approach for signal conditioning and load control in consumer electronics and industrial equipment.
Official complements include the PNP/PNP variant PEMB30 and the NPN/NPN complement PEMD30. Designers replacing discrete components should verify pin compatibility and electrical characteristics against the original BC847BS or BC847BV specifications.