PEMH30,315

PEMH30,315

  • Description:TRANS PREBIAS 2NPN 50V SOT666
  • Series:-

SKU:490cd4a3e191 Category: Brand:

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Product Detailed Parameters

  • Description:TRANS PREBIAS 2NPN 50V SOT666
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR)
  • Transistor Type:2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):2.2kOhms
  • Resistor - Emitter Base (R2):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 20mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):1µA
  • Frequency - Transition:-
  • Power - Max:300mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:SOT-666

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PEMH30,315

Overview

The PEMH30,315 is an NPN/NPN double Resistor-Equipped Transistor (RET) housed in a SOT666 surface-mounted plastic package. It integrates two NPN transistors with built-in bias resistors where R1 equals 2.2 kΩ and R2 remains open. The device supports a collector-emitter voltage of 50 V and an output current of 100 mA per transistor. Total power dissipation reaches 200 mW per transistor and 300 mW for the dual device at 25 °C ambient temperature. Operating junction temperatures range from -65 °C to +150 °C.

Feature Summary

  • Integrates dual NPN transistors with fixed input bias resistors to simplify circuit topology.
  • Reduces component count and pick-and-place costs compared to discrete solutions.
  • Provides low-current peripheral driver capabilities within an ultra-small SMD footprint.

Applications

  • Low current peripheral driver
  • Control of IC inputs
  • Cost-saving alternative for BC847BS and BC847BV

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm the exact packing method and tape pitch. Confirm that the SOT666 package version matches the required footprint dimensions for the target PCB layout before finalizing procurement orders.

Selection Notes

Select this component when space constraints require a dual-transistor solution with integrated base resistors. Ensure the 2.2 kΩ internal resistance aligns with the driving source requirements. Verify thermal management capabilities as the total power dissipation is limited to 300 mW for the complete device under standard conditions.

Part Context

This part belongs to the Resistor-Equipped Transistor family designed for compact digital switching applications. It serves as a direct replacement for discrete resistor-transistor networks, offering a simplified design approach for signal conditioning and load control in consumer electronics and industrial equipment.

Replacement Considerations

Official complements include the PNP/PNP variant PEMB30 and the NPN/NPN complement PEMD30. Designers replacing discrete components should verify pin compatibility and electrical characteristics against the original BC847BS or BC847BV specifications.

PEMH30,315PEMH30,315

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