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The PEMH7,115 is a dual NPN resistor-equipped transistor manufactured by Nexperia. It integrates two NPN transistors with a built-in base bias resistor (R1) of 4.7 kΩ and an open second resistor (R2). The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous output current (IO) of 100 mA. Total power dissipation reaches 300 mW at 25 °C ambient temperature. It operates within a junction temperature range up to 150 °C and features a minimum DC current gain (hFE) of 200 at 1 mA. The component is housed in a 6-lead SOT666 surface-mount package.
Verify the manufacturer designation carefully, as the product was formerly part of NXP Semiconductors before becoming Nexperia. Confirm the specific ordering suffix matches the required tape and reel quantity or cut tape format. Ensure the package variant aligns with the PCB footprint requirements for the SOT666 outline.
Select this component when a dual NPN array with a single fixed base resistor is required. The R1 value is fixed at 4.7 kΩ; verify that this resistance provides the appropriate base drive current for the target load. Consider the thermal resistance characteristics if multiple devices are mounted closely on the same substrate.
This device belongs to the PEMH7/PUMH7 family of NPN/NPN resistor-equipped transistors. The PEMH7 specifically utilizes the SOT666 plastic surface-mounted package with six leads. It serves as a discrete semiconductor solution designed to replace multiple individual components in low-power switching and logic interface circuits.
The PUMH7 is a functional equivalent within the same family but uses the SOT363 (SC-88) package. Verify pinout compatibility and physical dimensions before substituting, as the lead configurations differ between the SOT666 and SOT363 outlines.